PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 7

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10189
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
0.8
0.6
0.4
0.2
= 1 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
min
typ
60
(pF)
C
10 4
10 3
10 2
10
120
10 -1
T j ( C)
03aj65
Rev. 01 — 27 September 2002
180
1
Fig 10. Sub-threshold drain current as a function of
10
T
(A)
I D
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
C rss
0
C iss
C oss
03aj62
DS
0.2
10 2
= 5 V
min
TrenchMOS™ ultra low level FET
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
0.6
typ
PMN27UN
0.8
V GS (V)
03aj64
1
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