PSMN1R1-30EL NXP Semiconductors, PSMN1R1-30EL Datasheet - Page 4

• Manufacturer Part Number: PSMN1R1-30EL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R1-30EL
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
(A)
th(j-mb)
I
D
10
10
10
10
10
10
10
10
-1
-2
-3
-1
1
4
3
2
1
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
10
-1
Thermal characteristics
δ = 0.5
-6
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Limit R
DS on
10
= V
-5
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
-4
Conditions
see
Vertical in free air
Rev. 2 — 15 April 2011
Figure 4
10
-3
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
DC
10
10
-2
PSMN1R1-30EL
Min
-
-
V
10
DS
P
-1
t
100 μ s
1 ms
10 ms
100 ms
(V)
p
=10 μ s
Typ
0.22
60
tp
T
t
© NXP B.V. 2011. All rights reserved.
p
(s)
003aaf772
003a a f773
δ =
-
Max
0.44
tp
T
t
10
1
2
Unit
K/W
K/W
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