PSMN8R0-30YL NXP Semiconductors, PSMN8R0-30YL Datasheet - Page 3

• Manufacturer Part Number: PSMN8R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN8R0-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
10
80
60
40
20
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aaf418
mb
= V
1
(°C)
DS
/ I
200
D
Rev. 2 — 16 May 2011
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
DC
PSMN8R0-30YL
100
V
DS
(V)
100 ms
10 ms
t
100 μ s
1 ms
p
=10 μ s
150
© NXP B.V. 2011. All rights reserved.
T
mb
003aaf419
03aa16
(°C)
10
200
2
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