PSMN8R0-30YL NXP Semiconductors, PSMN8R0-30YL Datasheet - Page 9

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN8R0-30YL

Manufacturer Part Number
PSMN8R0-30YL
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN8R0-30YL
Product data sheet
Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
(pF)
All information provided in this document is subject to legal disclaimers.
10
C
10
10
10
4
3
2
10
-1
Rev. 2 — 16 May 2011
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
1
10
V
C
C
C
DS
003aaf425
oss
iss
rss
(V)
10
PSMN8R0-30YL
2
© NXP B.V. 2011. All rights reserved.
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