BLF369 NXP Semiconductors, BLF369 Datasheet

General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz

BLF369

Manufacturer Part Number
BLF369
Description
General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF369
Manufacturer:
MICROCHIP
Quantity:
1 200
Part Number:
BLF369
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BLF369112
Manufacturer:
NXP Semiconductors
Quantity:
135
1. Product profile
CAUTION
1.1 General description
1.2 Features
A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave
applications in the HF/VHF band up to 500 MHz.
Table 1.
Typical RF performance at V
[1]
[2]
I
I
I
I
I
I
I
I
I
Mode of operation
CW, class AB
2-tone, class AB
pulsed, class AB
BLF369
Multi-use VHF power LDMOS transistor
Rev. 04 — 19 February 2009
Typical pulsed performance at 225 MHz, a drain-source voltage V
quiescent drain current I
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
Designed for broadband operation (HF/VHF band)
Source on underside eliminates DC isolators, reducing common-mode inductance
Easy power control
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS), using exemption No. 7 of the annex
T
t
N
N
N
p
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
h
= 2 ms; = 10 %.
is the heatsink temperature.
Load power P
Power gain G
Drain efficiency
Typical performance
[2]
p
L
f
(MHz)
225
f
225
1
= 19 dB
= 500 W
= 225; f
D
DS
= 55 %
Dq
= 32 V and T
2
= 2
= 225.1
1.0 A:
h
P
(W)
500
-
500
= 25 C in a common-source 225 MHz test circuit.
L
P
(W)
-
500
-
L(PEP)
G
(dB)
18
19
19
p
Product data sheet
DS
of 32 V and a
(%)
60
47
55
D
IMD3
(dBc)
-
-
28
[1]

Related parts for BLF369

BLF369 Summary of contents

Page 1

... BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz. Table 1. Typical RF performance at V Mode of operation CW, class AB 2-tone, class AB ...

Page 2

... Rev. 04 — 19 February 2009 Multi-use VHF power LDMOS transistor Simplified outline Graphic symbol Conditions Min - 0 © NXP B.V. 2009. All rights reserved. BLF369 sym117 Version SOT800-2 Max Unit 65 V +13 V +150 C 200 C ...

Page 3

... R are measured under RF conditions. th(j-h) is dependent on the applied thermal compound and clamping/mounting of the device Rev. 04 — 19 February 2009 BLF369 Multi-use VHF power LDMOS transistor Conditions [1][ 200 C j [1][2][ 200 200 100 s ...

Page 4

... Rev. 04 — 19 February 2009 Multi-use VHF power LDMOS transistor Min Typ [ [ 100 [ [ [2] - 400 [2] - 230 - 15 001aae484 (V) DS BLF369 Max Unit - V 5 © NXP B.V. 2009. All rights reserved ...

Page 5

... G P (dB 100 200 CW power gain and drain efficiency as a function of output power; typical values Rev. 04 — 19 February 2009 BLF369 Multi-use VHF power LDMOS transistor L(PEP (W) (W) (dB) (%) - > 17 > 55 500 > 18 > 43 500 - > ...

Page 6

... D (%) 200 400 f = 225 MHz Pulsed drain efficiency as function of load power; typical values BLF369 001aae503 600 P (W) L(PEP) 001aah499 600 800 P ( ms; p © NXP B.V. 2009. All rights reserved ...

Page 7

... Rev. 04 — 19 February 2009 Multi-use VHF power LDMOS transistor 70 D (%) 200 400 f = 225 MHz Pulsed drain efficiency as function of load power; typical values BLF369 001aah501 600 800 P ( 100 s; p © NXP B.V. 2009. All rights reserved ...

Page 8

... Fig 10. Heatsink temperature as function of power dissipation at a duty cycle Fig 12. CW heatsink temperature as function of power dissipation 7.5 Ruggedness in class-AB operation The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: 2-tone signal rated load power (P BLF369_4 ...

Page 9

... T = 160 170 180 C j (10 190 C j (11 200 C j Fig 13. BLF369 electromigration (I 8. Test information Table 8. List of components For test circuit, see Figure 14, Figure 15 Component Description B1 semi rigid coax B2 semi rigid coax C1 multilayer ceramic chip capacitor ...

Page 10

... F 100 pF 220 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 04 — 19 February 2009 BLF369 Multi-use VHF power LDMOS transistor Remarks [1] [1] [1] [1] [ windings mm [ EZ90-25-TP EZ90-25-TP © ...

Page 11

C30 R11 C29 C28 50 B2 C31 R12 C32 C33 Fig 14. Class-AB common-source 225 MHz test circuit G1(test D1(test) C24 R7 C6 C23 C5 C22 C21 C20 ...

Page 12

Fig 15. Printed-Circuit Board (PCB) for class-AB 225 MHz test circuit 95 mm 001aae536 ...

Page 13

V G1(test) C30 R11 C29 C28 C31 C32 R12 B2 C33 + V G2(test) C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4. Fig 16. Component layout for class-AB 225 ...

Page 14

... 3.7 3.56 3.1 44.5 15.4 38.5 3.3 3.49 2.8 44.2 15.0 0.146 0.140 0.122 1.752 0.606 1.516 0.130 0.137 0.110 1.740 0.591 EUROPEAN PROJECTION BLF369 SOT800 0.25 0.25 0.05 0.01 0.01 0.002 ISSUE DATE 05-06-02 05-06-07 © NXP B.V. 2009. All rights reserved ...

Page 15

... Voltage Standing-Wave Ratio Data sheet status Product data sheet Preliminary data sheet Objective data sheet Objective data sheet Rev. 04 — 19 February 2009 BLF369 Multi-use VHF power LDMOS transistor Change notice Supersedes - BLF369_3 - BLF369_2 - BLF369_1 - - © NXP B.V. 2009. All rights reserved ...

Page 16

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 19 February 2009 BLF369 Multi-use VHF power LDMOS transistor © NXP B.V. 2009. All rights reserved ...

Page 17

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF369 All rights reserved. Date of release: 19 February 2009 Document identifier: BLF369_4 ...

Related keywords