BLF369 NXP Semiconductors, BLF369 Datasheet - Page 15

• Manufacturer Part Number: BLF369
• Description: General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF369_4
Product data sheet
Document ID
BLF369_4
Modifications:
BLF369_3
BLF369_2
BLF369_1
Revision history
Table 9.
Acronym
CW
DC
GSM
HF
LDMOS
LDMOST
PEP
RF
TTF
UHF
VHF
VSWR
Release date
20090219
20080129
20061208
20060413
•
Data sheet status updated from 'Preliminary data sheet' to 'Product data sheet'
Abbreviations
Description
Continuous Wave
Direct Current
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Very High Frequency
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Preliminary data sheet
Objective data sheet
Objective data sheet
Rev. 04 — 19 February 2009
Change notice
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-
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Multi-use VHF power LDMOS transistor
Supersedes
BLF369_3
BLF369_2
BLF369_1
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© NXP B.V. 2009. All rights reserved.
BLF369
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