BLF7G22LS-160 NXP Semiconductors, BLF7G22LS-160 Datasheet - Page 11

• Manufacturer Part Number: BLF7G22LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
Fig 19. Component layout for class-AB production test circuit
60.0
mm
Printed-Circuit Board (PCB): Taconic RF35; 
See
Table 9
C6
7.8 Test circuit
for a list of components.
C3
Table 9.
For test circuit see
[1]
[2]
[3]
Component
C1, C5, C8, C9
C3, C11
C6, C13
C15
R1
R1
NXP
BLF7G22L(S)-160
Input Rev 01
American Technical Ceramics type 800B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
C1
50.0 mm
List of components
C5
All information provided in this document is subject to legal disclaimers.
Figure
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
r
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
19.
= 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
C9
NXP
BLF7G22L-160
Output Rev 01
C11
50.0 mm
Value
68 pF
820 pF
10 F
470 F; 63 V
12 
C8
Power LDMOS transistor
C13
© NXP B.V. 2011. All rights reserved.
[1]
[2]
[3]
001aao005
Remarks
Philips 1206
C15
60.0
11 of 18
mm