BLF7G22LS-160 NXP Semiconductors, BLF7G22LS-160 Datasheet - Page 3

• Manufacturer Part Number: BLF7G22LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G22L-160_7G22LS-160
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at V
unless otherwise specified; in a class-AB production test circuit.
The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
g
R
Symbol
G
RL

ACPR
Symbol Parameter
PAR
DSS
DSX
GSS
j
fs
DS
D
(BR)DSS
GS(th)
DS(on)
p
= 25
in
O
= 28 V; I
5M

C; unless otherwise specified.
output peak-to-average ratio P
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Characteristics
Application information
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Dq
= 1300 mA; P
All information provided in this document is subject to legal disclaimers.
DS
1
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
= 2112.5 MHz; f
= 28 V; I
Dq
L
= 160 W; f = 2110 MHz.
= 1300 mA; T
2
= 2117.5 MHz; f
Conditions
at 0.01 % probability on CCDF
L(AV)
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 100 W;
= 7.56 A
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 25
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
3
D

DS
= 2162.5 MHz; f
D
D
DS
C; unless otherwise specified; in a
= 2.16 mA
+ 3.75 V;
DS
+ 3.75 V;
= 43 W
= 43 W
= 43 W
= 43 W
= 216 mA
= 10.8 A
= 28 V
= 28 V; I
= 0 V
Power LDMOS transistor
Dq
Min Typ
16.5 18.0
-
27
-
= 1300 mA; T
Min Typ
65
1.5
-
34
-
-
-
4
Min Typ Max Unit
3.9
= 2167.5 MHz;
© NXP B.V. 2011. All rights reserved.
15
30
32
-
1.9
-
-
-
20
0.06
4.15 -
Max
-
6.5
-
28
case
Max Unit
-
2.3
4.5
-
450
-
-
= 25
3 of 18
V
V
A
A
nA
S

dB
Unit
dB
dB
%
dBc

C;