BLF7G22LS-160 NXP Semiconductors, BLF7G22LS-160 Datasheet - Page 15

• Manufacturer Part Number: BLF7G22LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 12.
BLF7G22L-160_7G22LS-160
Product data sheet
Document ID
BLF7G22L-160_7G22LS-160 v.2.1 20111102
Modifications:
BLF7G22L-160_7G22LS-160 v.2
Modifications:
BLF7G22L-160_7G22LS-160 v.1
Revision history
Table 11.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Abbreviations
Release date
20111020
20110427
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•
•
Table
The status of this document has been changed to Product data sheet
Table 7 on page
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Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G22L-160; BLF7G22LS-160
3: amended package descriptions
Rev. 2.1 — 2 November 2011
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet -
3: the minimum value for 
Change
notice
-
-
D
has been changed
Supersedes
BLF7G22L-160_7G22LS-160 v.2
BLF7G22L-160_7G22LS-160 v.1
-
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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