BLF7G22LS-160 NXP Semiconductors, BLF7G22LS-160 Datasheet - Page 8

• Manufacturer Part Number: BLF7G22LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
Fig 13. Power gain and drain efficiency as function of load power; typical values
Fig 14. Adjacent channel power ratio (5 MHz) as a
ACPR
(dBc)
(1) f = 2110 MHz
(2) f = 2170 MHz
(1) f = 2110 MHz; f + 885 kHz
(2) f = 2170 MHz; f + 885 kHz
(3) f = 2110 MHz; f  885 kHz
(4) f = 2170 MHz; f  885 kHz
885k
-20
-30
-40
-50
-60
-70
28
V
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
33
7.5 IS-95
Dq
Dq
= 1300 mA.
= 1300 mA.
(1)
(2)
38
43
(3)
(4)
(dB)
G
p
22
20
18
16
14
12
28
48
All information provided in this document is subject to legal disclaimers.
P
001aao000
L
(dBm)
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
G
η
33
D
53
p
38
(2)
(1)
Fig 15. Adjacent channel power ratio (10 MHz) as a
ACPR
43
(dBc)
(1) f = 2110 MHz; f + 1980 kHz
(2) f = 2170 MHz; f + 1980 kHz
(3) f = 2110 MHz; f  1980 kHz
(4) f = 2170 MHz; f  1980 kHz
1980k
-50
-60
-70
-80
-90
V
function of load power; typical values
48
28
DS
001aan999
P
L
= 28 V; I
(dBm)
33
53
50
40
30
20
10
0
Dq
(%)
η
(1)
(2)
D
= 1300 mA.
38
Power LDMOS transistor
(3)
(4)
43
© NXP B.V. 2011. All rights reserved.
48
P
001aao001
L
(dBm)
53
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