BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet - Page 2

150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF7G27L-150P

Manufacturer Part Number
BLF7G27L-150P
Description
150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-150P_7G27LS-150P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-150P (SOT539A)
1
2
3
4
5
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
Type number
BLF7G27L-150P
BLF7G27LS-150P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1 — 12 November 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
37
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
°C
°C

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