BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet - Page 7

• Manufacturer Part Number: BLF7G27L-150P
• Description: 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
0
V
Single carrier W-CDMA power gain as a
function of load power; typical values
DS
= 28 V; I
7.4 Single carrier W-CDMA
Dq
40
= 1200 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
(3)
(1)
(2)
80
BLF7G27L-150P; BLF7G27LS-150P
P
All information provided in this document is subject to legal disclaimers.
L
001aam995
(W)
Rev. 1 — 12 November 2010
120
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
10
0
0
V
function of load power; typical values
DS
= 28 V; I
Dq
40
= 1200 mA.
Power LDMOS transistor
80
(1)
(3)
(2)
© NXP B.V. 2010. All rights reserved.
P
L
001aam996
(W)
120
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