BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-150P
• Description: 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
885
−10
−20
−30
−40
−50
−60
−70
12
0
8
4
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
Single carrier IS-95 ACPR at 885 kHz as a
Single carrier IS-95 peak-to-average power
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1200 mA.
= 1200 mA.
40
40
(3)
(2)
(1)
(1)
(2)
(3)
60
60
BLF7G27L-150P; BLF7G27LS-150P
80
80
All information provided in this document is subject to legal disclaimers.
001aam989
001aam991
P
P
L
L
(W)
(W)
Rev. 1 — 12 November 2010
100
100
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
1980
−20
−40
−60
−80
250
200
150
100
50
0
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
V
Single carrier IS-95 peak power as a function
of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1200 mA.
= 1200 mA.
40
40
(3)
(2)
(1)
Power LDMOS transistor
60
60
(1)
(2)
(3)
© NXP B.V. 2010. All rights reserved.
80
80
001aam990
001aam992
P
P
L
L
(W)
(W)
100
100
5 of 14