BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-150P
• Description: 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G27L-150P_7G27LS-150P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load
mismatch corresponding to VSWR = 20 : 1 through all phases under the following
conditions: V
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 25
885k
°
C unless otherwise specified.
°
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
thermal resistance from junction to case
C; unless otherwise specified.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
DS
BLF7G27L-150P; BLF7G27LS-150P
1
All information provided in this document is subject to legal disclaimers.
= 28 V; I
= 2500 MHz; f
Rev. 1 — 12 November 2010
Dq
= 1200 mA; P
2
= 2700 MHz; RF performance at V
Conditions
V
V
V
V
V
V
I
L
D
GS
DS
GS
GS
DS
GS
DS
GS
= 35 W (IS-95); f = 2500 MHz.
= 3.5 A
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
GS(th)
GS(th)
Conditions
T
D
case
Conditions
DS
D
D
= 1 mA
+ 3.75 V;
DS
+ 3.75 V;
= 100 mA
= 3.57 A
= 28 V
= 80 °C; P
= 0 V
DS
Power LDMOS transistor
= 28 V; I
L
Min
65
1.3
-
16.75 19
-
-
-
= 30 W
Min Typ Max Unit
-
14.8 16.5 -
-
22
−43 −47 -
© NXP B.V. 2010. All rights reserved.
Dq
Typ
-
1.9
-
-
0.86
0.14
30
−10 -
26
= 1200 mA;
Typ
0.25
-
-
Max Unit
-
2.3
5
-
500
-
-
3 of 14
Unit
K/W
W
dB
dB
%
dBc
V
V
μA
A
nA
S
Ω