BLF7G27L-150P NXP Semiconductors, BLF7G27L-150P Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-150P
• Description: 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
13
12
0
V
Pulsed CW power gain as a function of load
power; typical values
DS
= 28 V; I
40
7.3 Pulsed CW
Dq
= 1200 mA.
80
120
(3)
(2)
(1)
BLF7G27L-150P; BLF7G27LS-150P
160
All information provided in this document is subject to legal disclaimers.
001aam993
P
L
(W)
Rev. 1 — 12 November 2010
200
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
load power; typical values
DS
= 28 V; I
40
Dq
= 1200 mA.
80
Power LDMOS transistor
120
(1)
(3)
(2)
© NXP B.V. 2010. All rights reserved.
160
001aam994
P
L
(W)
200
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