BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 11

200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz

BLF7G27L-200PB

Manufacturer Part Number
BLF7G27L-200PB
Description
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
11. Revision history
Table 11.
BLF7G27L-200PB
Product data sheet
Document ID
BLF7G27L-200PB v.2
Modifications:
BLF7G27L-200PB_27LS-200PB v.1
Revision history
Release date
20120220
20110405
All information provided in this document is subject to legal disclaimers.
This document now only describes the BLF7G27L-200PB product.
Table 1 on page
Section 1.2 on page
Section 1.3 on page
Table 4 on page
Table 5 on page
Table 6 on page
Table 7 on page
Section 7.1 on page
Table 8 on page
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
Section 7.5 on page
Section 7.6 on page
Section 7.7 on page
Rev. 2 — 20 February 2012
Data sheet status
Product data sheet
Objective data sheet -
1: Some changes have been made.
2: The line specifying I
2: Some changes have been made.
3: Some changes have been made.
3: Some changes have been made.
4: Some changes have been made
1: Some changes have been made.
1: Some changes have been made.
3: Some changes have been made.
4: Section has been added.
4: Section has been added.
5: Section has been added.
6: Section has been added.
7: Section has been added.
8: Section has been added.
BLF7G27L-200PB
Change notice
-
D
has been removed from the table.
Power LDMOS transistor
Supersedes
BLF7G27L-200PB_
27LS-200PB v.1
-
© NXP B.V. 2012. All rights reserved.
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