BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 4

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-200PB
Product data sheet
Fig 2.
G%
*
S
S S
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz






V
Power gain as a function of average load
power; typical values
DS
= 32 V; I

7.2 Impedance information
7.3 1 Tone CW
Dq

= 1700 mA.
Table 8.
Measured load-pull data half device; I
[1]
f
(MHz)
2500
2600
2700
Fig 1.
Z

S
and Z
Definition of transistor impedance

Typical impedance
L
3
defined in
/ $9
All information provided in this document is subject to legal disclaimers.

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Figure
Rev. 2 — 20 February 2012

1.
Z
()
3.07  j3.51
4.51  j12.51
7.56  j15.0
S
[1]
Dq
Fig 3.
gate
= 850 mA; V
Z
'
S
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz







V
Drain efficiency as a function of average load
power; typical values
DS
= 32 V; I
001aaf059
DS
Z

drain
= 32 V.
L
BLF7G27L-200PB
Dq
= 1700 mA.

Z
()
2.79  j4.86
2.61  j4.49
2.36  j4.41
L
[1]
Power LDMOS transistor

3
/ $9



© NXP B.V. 2012. All rights reserved.

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