BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G27L-200PB
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Mode of operation: 2-carrier W-CDMA, PAR = 8.4 dB at 0.01 % probability on the CCDF, 3GPP test
model 1; 1-64 DPCH; f
RF performance at V
class-AB production test circuit.
The BLF7G27L-200PB is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
I
Symbol
P
G
RL

ACPR
Dq
DSS
DSX
GSS
Dq
j
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 1700 mA; P

C per section, unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
quiescent drain current
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
All information provided in this document is subject to legal disclaimers.
L
= 200 W (CW); f = 2600 MHz.
DS
1
= 32 V; I
= 2622.5 MHz; f
Rev. 2 — 20 February 2012
Dq
= 1700 mA; T
2
= 2627.5 MHz; f
Conditions
V
V
V
V
V
V
V
I
main transistor:
sense transistor:
D
GS
DS
GS
GS
DS
GS
DS
GS
V
I
V
= 5.04 A
DS
case
DS
DS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 31 mA
= 32 V
= 30.1 V
= 25
GS(th)
GS(th)
D
Conditions
BLF7G27L-200PB
DS
3
D
D

= 1.44 mA
+ 3.75 V;
DS
+ 3.75 V;
C; unless otherwise specified; in a
= 2682.5 MHz; f
= 144 mA
= 7.2 A
= 28 V
= 0 V
Power LDMOS transistor
Min
65
1.5
-
-
-
-
-
1530 1700 1870 mA
DS
Min Typ Max Unit
-
14.8 16.5 17.7 dB
-
25.5 29
-
4
= 2687.5 MHz;
= 32 V;
© NXP B.V. 2012. All rights reserved.
Typ
-
1.9
-
28
-
10.6 -
0.1
65
15 5
30 27
-
-
-
Max Unit
2.3
2.8
-
280
-
3 of 14
W
dB
%
dBc
V
V
A
A
nA
S
