BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 2

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G27L-200PB
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4
5
6, 7
8, 9
Type number
BLF7G27L-200PB
Symbol
V
V
T
T
Symbol Parameter
R
stg
j
DS
GS
th(j-c)
Connected to flange.
thermal resistance from junction to case T
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
sense drain
sense gate
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 2 — 20 February 2012
flanged LDMOST ceramic package; 2 mounting holes;
8 leads
Conditions
[1]
Conditions
V
case
DS
Simplified outline
= 32 V; I
6
8
BLF7G27L-200PB
= 80 C; P
1
3
Dq
2
4
= 1700 mA
L
= 65 W;
Power LDMOS transistor
7
9
5
Graphic symbol
Min
-
0.5
65
-
© NXP B.V. 2012. All rights reserved.
3
4
1
2
Max
65
+13
+150
200
Typ
0.22
5
Version
SOT1110A
6, 7
sym127
2 of 14
Unit
K/W
Unit
V
V
C
C
8, 9