BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 9

200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz

BLF7G27L-200PB

Manufacturer Part Number
BLF7G27L-200PB
Description
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Package outline
Fig 16. Package outline SOT1110A
BLF7G27L-200PB
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 8 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
H
mm
Unit
SOT1110A
Outline
version
U
A
(1)
2
max
nom
max
nom
min
min
A
Z
0.211
0.157
5.36
3.99
A
0.045
0.035
1.14
0.89
b
6
8
L
11.81
11.56
0.465
0.455
IEC
b
b
1
0.007
0.004
0.18
0.10
c
3
1
31.55
30.94
1.242
1.218
D
31.52
30.96
1.241
1.219
JEDEC
D
All information provided in this document is subject to legal disclaimers.
0
1
13.72
0.540
References
e
Rev. 2 — 20 February 2012
0.374
0.366
9.50
9.30
E
D
U
H
D
scale
e
q
1
1
1
5
0.375
0.365
9.53
9.27
E
JEITA
1
0.069
0.059
1.75
1.50
F
b
17.12
16.10
0.674
0.634
1
H
10 mm
25.53
25.27
1.005
0.995
H
1
2
4
0.105
0.095
2.67
2.41
L
BLF7G27L-200PB
3.30
3.05
0.13
0.12
p
w
w
7
9
3
1
0.089
0.079
2.26
2.01
Q
5
A
European
projection
(2)
35.56
Power LDMOS transistor
B
1.4
p
q
F
w
B
C
2
41.28
41.02
1.625
1.615
E
U
D
1
1
© NXP B.V. 2012. All rights reserved.
0.25
0.01
10.29
10.03
0.405
0.395
w
U
Q
3
2
Issue date
09-11-20
10-02-02
0.235
0.225
5.97
5.72
0.25
0.01 0.02
w
sot1110a_po
Z
SOT1110A
c
1
0.51
64
62
64
62
w
2
9 of 14
E

Related parts for BLF7G27L-200PB