BF1203 NXP Semiconductors, BF1203 Datasheet - Page 16

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Amplifier b scattering parameters
V
2001 Apr 25
handbook, full pagewidth
(MHz)
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FET
50
f
= 5 V; V
MAGNITUDE
G2-S
(ratio)
0.988
0.987
0.981
0.969
0.957
0.941
0.925
0.907
0.889
0.827
0.853
= 4 V; I
s
11
D
= 12 mA; T
ANGLE
13.19
19.81
26.42
33.04
39.44
45.89
51.93
57.82
63.24
R GEN
3.30
6.60
(deg)
50 Ω
V I
Fig.35 Cross-modulation test set-up (for one MOS-FET).
50 Ω
amb
MAGNITUDE
R2
(ratio)
= 25 C
2.93
2.92
2.90
2.87
2.84
2.79
2.73
2.67
2.60
2.54
2.46
4.7 nF
C2
s
V GG
21
10 kΩ
R G1
R1
V AGC
ANGLE
166.05
172.11
164.49
156.59
149.17
141.47
134.25
126.81
119.56
112.70
105.72
(deg)
4.7 nF
16
C1
MAGNITUDE
DUT
0.0006
0.0013
0.0025
0.0036
0.0045
0.0051
0.0054
0.0055
0.0055
0.0048
0.0042
(ratio)
V DS
L1
≈
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
ANGLE
87.62
86.02
82.03
76.76
73.59
71.13
69.07
68.03
68.55
69.87
78.19
(deg)
MGS315
R L
50 Ω
MAGNITUDE
(ratio)
0.994
0.993
0.990
0.986
0.981
0.975
0.971
0.966
0.958
0.957
0.954
Product specification
s
BF1203
22
ANGLE
11.32
14.22
17.04
19.92
22.77
25.54
28.41
(deg)
1.45
2.92
5.72
8.57