BF1203 NXP Semiconductors, BF1203 Datasheet - Page 2

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
 Two low noise gain controlled amplifiers in a single
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance
APPLICATIONS
 Gain controlled low noise amplifiers for VHF and UHF
DESCRIPTION
The BF1203 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very
good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
encapsulated in a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
2001 Apr 25
Per MOS-FET unless otherwise specified
V
I
y
C
C
NF
X
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
package
ratio.
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DS
mod
Dual N-channel dual gate MOS-FET
ig1-s
rss
fs

drain-source voltage
drain current (DC)
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
PARAMETER
amp. a: I
amp. b: I
amp. a: I
amp. b: I
amp. a: f = 400 MHz; I
amp. b: f = 800 MHz; I
amp. a: input level for k = 1% at 40 dB AGC 105
amp. b: input level for k = 1% at 40 dB AGC 100
D
D
D
D
= 15 mA
= 12 mA
= 15 mA; f = 1 MHz
= 12 mA; f = 1 MHz
CAUTION
CONDITIONS
2
PINNING - SOT363
handbook, halfpage
Marking code: L2-
D
D
PIN
Top view
1
2
3
4
5
6
= 15 mA
= 12 mA
1
6
Fig.1 Simplified outline and symbol.
5
2
gate 1 (a)
gate 2
drain (a)
drain (b)
source
gate 1 (b)
4
3
DESCRIPTION


23
25





MIN.
g1 (b)
g1 (a)
AMP
a
Product specification


28
30
2.6
1.7
15
1
1.1

105
TYP.
g2
s
BF1203
10
30
35
40
3.1
2.2

1.8
1.8


AMP
MAX. UNIT
d (b)
d (a)
b
MBL254
V
mA
mS
mS
pF
pF
fF
dB
dB
dBV
dBV