BF1203 NXP Semiconductors, BF1203 Datasheet - Page 3

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2001 Apr 25
handbook, halfpage
Per MOS-FET unless otherwise specified
V
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
Dual N-channel dual gate MOS-FET
th j-s
(mW)
P tot
s
250
200
150
100
is the temperature at the soldering point of the source lead.
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C; note 1
3
CONDITIONS





65

MIN.
VALUE
240
10
30
10
10
200
+150
150
Product specification
MAX.
BF1203
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT