BF1203 NXP Semiconductors, BF1203 Datasheet - Page 5

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2001 Apr 25
y
C
C
C
C
F
G
X
SYMBOL
mod
Dual N-channel dual gate MOS-FET
ig1-ss
ig2-ss
oss
rss
tr
fs

forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
= 4 V; V
pulsed; T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 10.7 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
input level for k = 1%; f
f
unw
L
L
L
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
DS
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= 60 MHz; note 2
= 5 V; I
j
= 25 C
D
CONDITIONS
L
L
= B
= B
= 15 mA; unless otherwise specified.
S
S
S
L
S
S
5
S
= Y
= Y
= B
= 2 mS; B
= 2 mS; B
= 3.3 mS; B
= 20 mS; B
L opt
L opt
S opt
S opt
L opt
; note 1
; note 1
w
; note 1
= 50 MHz;
S
S
= B
= B
S
S
= 0
= B
S opt
S opt
S opt
;
;
;
23










90

105
MIN.
28
2.6
3
0.9
15
5
1
1.9
32.5
27
21

95

TYP.
Product specification
35
3.1


30
7
1.8
2.5






MAX.
BF1203
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT