BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 3

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
handbook, halfpage
V
I
I
I
P
T
T
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual gate MOS-FETs
(mW)
P tot
s
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
50
PARAMETER
100
150
T s ( C)
MGL615
200
Rev. 04 - 13 November 2007
T
s
110 C; note 1; see Fig.4
CONDITIONS
BF904A; BF904AR; BF904AWR
65
MIN.
7
30
200
+150
150
10
10
Product specification
MAX.
3 of 15
V
mA
mA
mA
mW
C
C
UNIT