BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 5

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
handbook, halfpage
N-channel dual gate MOS-FETs
(dB V)
V
f
Fig.7
unw
V unw
DS
Fig.5
(mS)
Y fs
= 60 MHz; T
= 5 V; V
120
110
100
90
80
40
30
20
10
0
0
50
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
GG
Transfer admittance as a function of the
junction temperature; typical values.
= 5 V; f
amb
10
= 25 C; R
w
0
= 50 MHz.
20
G1
= 120 k
50
30
gain reduction (dB)
100
40
T ( C)
MRA771
j
MLD268
o
Rev. 04 - 13 November 2007
50
150
handbook, halfpage
reduction
V
T
gain
(dB)
f = 50 MHz.
j
DS
= 25 C.
(mA)
= 5 V.
Fig.8 Transfer characteristics; typical values.
Fig.6
I D
BF904A; BF904AR; BF904AWR
10
20
30
40
50
0
20
15
10
5
0
0
0
Typical gain reduction as a function of
the AGC voltage; see Fig.21.
0.4
1
0.8
V
G2 S
2
1.2
= 4 V
Product specification
3
V
3 V
1.6
AGC
V
G1 S
MRA769
2.5 V
2 V
1.5 V
1 V
MLD270
(V)
5 of 15
4
(V)
2.0