BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 6

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
T
V
T
j
DS
(mS)
j
G2-S
(mA)
= 25 C.
y fs
= 25 C.
I D
Fig.11 Forward transfer admittance as a
= 5 V.
Fig.9 Output characteristics; typical values.
20
16
12
40
30
20
10
= 4 V.
8
4
0
0
0
0
function of drain current; typical values.
2
4
4
8
V
G1 S
1.0 V
1.3 V
1.2 V
1.1 V
0.9 V
= 1.4 V
12
6
V
G2 S
16
8
V
I
D
DS
2 V
3.5 V
3 V
2.5 V
= 4 V
MLD269
MLD272
(mA)
(V)
Rev. 04 - 13 November 2007
10
20
handbook, halfpage
handbook, halfpage
V
V
T
Fig.12 Drain current as a function of gate 1 current;
V
T
Fig.10 Gate 1 current as a function of gate 1
j
DS
G2-S
(mA)
DS
j
= 25 C.
( A)
= 25 C.
I D
I G1
= 5 V.
150
100
BF904A; BF904AR; BF904AWR
= 5 V.
16
12
50
= 4 V.
8
4
0
0
0
0
typical values.
voltage; typical values.
0.5
10
1.0
20
1.5
30
V
G2 S
Product specification
2.0
40
= 4 V
V
3.5 V
3 V
2.5 V
2 V
I
G1 S
G1
MLD273
MLD271
( A)
6 of 15
(V)
2.5
50