73S1217F Maxim, 73S1217F Datasheet - Page 12

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73S1217F

Manufacturer Part Number
73S1217F
Description
The Teridian 73S1217F is a self-contained SoC smart card reader IC that is an ideal solution for any USB-connected ISO 7816 design
Manufacturer
Maxim
Datasheet
specific SFR registers in the proper sequence. These special pattern/sequence requirements prevent
inadvertent erasure of the flash memory.
The mass erase sequence is:
Program Memory: The 80515 can address up to 64KB of program memory space from 0x0000 to
0xFFFF. Program memory is read when the MPU fetches instructions or performs a MOVC operation.
After reset, the MPU starts program execution from location 0x0000. The lower part of the program
memory includes reset and interrupt vectors. The interrupt vectors are spaced at 8-byte intervals, starting
from 0x0003. Reset is located at 0x0000.
Flash Memory: The program memory consists of flash memory. The flash memory is intended to
primarily contain MPU program code. Flash erasure is initiated by writing a specific data pattern to
1. Write 1 to the FLSH_MEEN bit in the
2. Write pattern 0xAA to
Note: The mass erase cycle can only be initiated when the ICE port is enabled.
The page erase sequence is:
1. Write the page address to
2. Write pattern 0x55 to
The PGADDR register denotes the page address for page erase. The page size is 512 (200h) bytes and
there are 128 pages within the flash memory. The
memory address such that bit 7:1 of the
Bit 0 of the PGADDR is not used and is ignored. The MPU may write to the flash memory. This is one of
the non-volatile storage options available to the user. The
write enable) differentiates 80515 data store instructions (MOVX@DPTR,A) between Flash and XRAM
writes. Before setting FLSH_PWE, all interrupts need to be disabled by setting EAL = 1. Table 3 shows
the location and description of the 73S1217F flash-specific SFRs.
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Any flash modifications must set the CPUCLK to operate at 3.6923 MHz
before any flash memory operations are executed to insure the proper timing when modifying the
flash memory.
ERASE
ERASE
PGADDR
(SFR address 0x94)
(SFR address 0x94)
PGADDR
(SFR address 0xB7[7:1])
FLSHCTL
corresponds to bit 15:9 of the flash memory address.
PGADDR
register (SFR address 0xB2[1]).
FLSHCTL
denotes the upper seven bits of the flash
SFR bit FLSH_PWE (flash program
(MPUCLKCtl
= 0x0C)
Rev. 1.2

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