SIE808DF Vishay, SIE808DF Datasheet

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SIE808DF

Manufacturer Part Number
SIE808DF
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE808DF-T1-E3
Manufacturer:
UTC/友顺
Quantity:
20 000
Company:
Part Number:
SIE808DF-T1-E3
Quantity:
1 140
Document Number: 73739
S-60621-Rev. A, 24-Apr-06
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
Top surface is connected to pins 1, 5, 6, and 10
V
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
20
10
(V)
D
D
1
Ordering Information: SiE808DF-T1-E3 (Lead (Pb)-free)
G
0.0025 at V
G
2
0.0016 at V
9
Top View
S
3
8
S
r
DS(on)
D
S
4
GS
7
S
GS
(Ω)
= 4.5 V
= 10 V
e
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
220
117
N-Channel 20-V (D-S) MOSFET
6
D
5
I
D
(A)
7
Bottom View
Package
4
a
Limit
S
60
60
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8
C
C
A
A
C
A
C
C
A
A
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
New Product
Q
G
= 25 °C, unless otherwise noted
9
2
46 nC
g
(Typ)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM
• DC/DC Conversion: Low-Side
• Synchronous Rectification
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen II Power MOSFET
G
Ratio Helps Prevent Shoot-Through
60
220 (Silicon Limit)
For Related Documents
N-Channel MOSFET
a
(Package Limit)
- 50 to 150
4.3
5.2
3.3
Limit
45
36
± 20
60
100
60
125
260
20
35
61
80
b, c
b, c
b, c
b, c
b, c
a
a
®
D
S
Package for
Vishay Siliconix
SiE808DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SIE808DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE808DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE808DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73739 S-60621-Rev. A, 24-Apr- thru 0.20 0.25 0.30 10000 60 80 100 = 100 120 SiE808DF Vishay Siliconix 125 ° ° 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C ...

Page 4

... SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 100 T = 150 ° 0.00 0.2 0.4 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.8 2.6 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1 – Temperature (°C) J Threshold Voltage www.vishay.com 4 0.0050 0.0045 0.0040 0.0035 0.0030 0.0025 0.0020 ° ...

Page 5

... S-60621-Rev. A, 24-Apr-06 140 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- SiE808DF Vishay Siliconix 100 125 – Case Temperature (° Power Derating, Junctio-to-Case www.vishay.com ...

Page 6

... SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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