SIE808DF Vishay, SIE808DF Datasheet - Page 2

• Manufacturer Part Number: SIE808DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiE808DF
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
a, b
= 25 °C, unless otherwise noted
a
a, c
ΔV
Symbol
ΔV
V
r
GS(th)
I
DS(on)
t
t
t
t
I
C
I
V
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
DS
I
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
a
b
fs
gs
gd
r
f
r
f
Steady State
g
rr
g
t ≤ 10 sec
/T
/T
J
J
I
F
V
V
V
V
I
= 10 A, di/dt = 100 A/µs, T
I
D
D
DS
DS
DS
DS
≅ 10 A, V
≅ 10 A, V
= 20 V, V
= 10 V, V
R
V
V
= 10 V, V
= 10 V, V
V
R
V
V
V
V
DS
DS
V
V
V
thJC
GS
thJC
DS
DS
GS
DS
GS
DD
DD
Symbol
Test Conditions
= V
= 0 V, V
R
= 0 V, I
= 20 V, V
≥ 5 V, V
(Source)
= 4.5 V, I
= 10 V, I
= 10 V, I
thJA
= 10 V, R
= 10 V, R
T
(Drain)
I
f = 1 MHz
GEN
D
GEN
I
C
GS
S
GS
GS
= 250 µA
GS
GS
= 25 °C
= 10 A
, I
= 4.5 V, I
= 4.5 V, R
= 0 V, T
D
= 10 V, I
= 10 V, R
GS
= 0 V, f = 1 MHz
D
GS
D
D
= 250 µA
D
GS
= 250 µA
= ± 20 V
L
L
= 25 A
= 25 A
= 25 A
= 10 V
= 1 Ω
= 1 Ω
= 0 V
J
D
D
= 55 °C
g
g
J
= 25 A
= 20 A
= 1 Ω
= 25 °C
= 1 Ω
Typical
0.8
2.2
20
Min
1.5
20
25
0.0013
0.0021
Maximum
8800
1600
- 7.3
Typ
600
102
180
215
S-60621-Rev. A, 24-Apr-06
26.5
2.3
0.9
0.8
95
46
26
50
15
25
55
55
10
56
60
26
30
Document Number: 73739
8
2.7
24
1
0.0016
0.0025
± 100
Max
1.35
155
270
325
100
1.2
10
70
75
25
40
85
85
15
60
85
90
3
1
°C/W
Unit
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V