SIE808DF Vishay, SIE808DF Datasheet - Page 3

• Manufacturer Part Number: SIE808DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73739
S-60621-Rev. A, 24-Apr-06
0.0030
0.0026
0.0022
0.0018
0.0014
0.0010
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0.00
8
6
4
2
0
0
0
I
D
= 20 A
V
0.05
GS
20
V
20
= 4.5 V
DS
Output Characteristics
Q
– Drain-to-Source Voltage (V)
g
0.10
I
D
40
– Total Gate Charge (nC)
V
V
GS
Gate Charge
– Drain Current (A)
DS
40
= 10 V
= 10 V
0.15
60
V
V
DS
60
GS
0.20
= 16 V
80
= 10 thru 5 V
V
V
GS
GS
80
0.25
100
= 3 V
= 4 V
0.30
120
100
10000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
1.5
0
On-Resistance vs. Junction Temperature
- 25
C
rss
2.0
V
V
GS
DS
Transfer Characteristics
T
T
J
T
5
0
C
– Junction Temperature (°C)
C
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
= 25 °C
= 125 °C
C
25
Capacitance
2.5
oss
V
I
D
GS
10
50
= 25 A
Vishay Siliconix
= 4.5 V, 10 V
3.0
75
C
iss
SiE808DF
T
100
15
C
www.vishay.com
3.5
= - 55 °C
125
4.0
150
20
3