SIE808DF Vishay, SIE808DF Datasheet - Page 6

• Manufacturer Part Number: SIE808DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiE808DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73739.
www.vishay.com
6
0.01
0.01
0.01
0.1
0.1
0.1
2
1
2
1
2
1
10
10
10
-4
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.05
0.1
0.05
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
10
-3
0.02
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Source
10
10
-3
-3
10
-2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-1
10
10
--
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
10
DM
JM
–1
-1
– T
t
1
A
= P
t
2
DM
Z
S-60621-Rev. A, 24-Apr-06
Document Number: 73739
thJA
thJA
100
t
t
1
2
(t)
= 55 °C/W
600
1
1