SIE808DF Vishay, SIE808DF Datasheet - Page 4

• Manufacturer Part Number: SIE808DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiE808DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
100
10
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
T
J
J
= 150 °C
– Temperature (°C)
25
0.4
I
D
= 250 µA
50
0.6
75
0.01
100
0.1
10
by r
0.01
1
100
*Limited
T
0.8
Safe Operating Area, Junction-to-Ambient
DS(on)
J
*V
= 25 °C
GS
125
V
Single Pulse
0.1
minimum V
DS
T
150
1.0
A
= 25 °C
– Drain-to-Source Voltage (V)
GS
at which r
1
BVDSS
Limited
DS(on)
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
10
50
40
30
20
10
0
0.01
is specified
2
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1 ms
DC
10 ms
100 ms
1 s
10 s
0.1
100
V
4
GS
– Gate-to-Source Voltage (V)
Time (sec)
1
6
S-60621-Rev. A, 24-Apr-06
Document Number: 73739
10
8
100
I
D
25 °C
125 °C
= 25 A
1000
10