PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 2

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07325
Product specification
Symbol
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
D
DM
S
SM
AS
j
stg
j
DS
tot
DS
DGR
GS
tot
AS
DSon
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
non-repetitive avalanche energy
non-repetitive avalanche current
Quick reference data
Limiting values
Parameter
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Rev. 01 — 13 September 2000
Conditions
T
T
T
Figure 2
T
Figure 2
T
T
T
T
unclamped inductive load;
I
V
V
unclamped inductive load;
V
V
D
Conditions
T
T
T
V
j
j
mb
mb
mb
mb
mb
mb
DD
GS
DD
GS
= 25 to 175
= 25 to 175
= 75 A; t
j
mb
mb
GS
= 25 to 175
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting T
= 10 V; starting T
= 25
= 25
= 10 V; I
25 V; R
25 V; R
and
and
o
o
p
C; V
C
N-channel enhancement mode field-effect transistor
= 0.1 ms;
Figure 1
3
3
GS
GS
o
D
o
GS
C
C; R
o
GS
GS
= 25 A
C
= 50 ;
= 50 ;
= 10 V;
= 10 V;
= 10V
GS
p
p
j
j
= 20 k
= 25 C
= 25 C
10 s
10 s
Typ
4.3
Min
55
55
PHB160N03T
© Philips Electronics N.V. 2000. All rights reserved.
Max
30
75
230
175
5
Max
30
30
75
75
240
230
+175
+175
75
240
500
75
30
Unit
V
A
W
m
Unit
V
V
V
A
A
A
W
A
A
mJ
A
C
C
C
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