PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 5

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07325
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
g(tot)
gs
gd
iss
oss
rss
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 9
V
V
V
Figure 7
V
Figure 11
I
V
V
f = 1 MHz;
V
V
I
I
Figure 13
I
dI
V
D
D
D
S
S
S
DS
GS
GS
DS
GS
GS
DD
GS
GS
S
T
T
T
T
T
T
T
T
T
= 250 A; V
= 1 mA; V
= 75 A; V
= 25 A; V
= 75 A; V
= 75 A;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
= 30 V; V
= 25 V; I
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 10 V;
= 0 V; V
= 30 V; R
= 10 V; R
= 10 V; V
Rev. 01 — 13 September 2000
and
Figure 12
DS
GS
GS
Figure 14
DS
DS
D
D
8
GS
D
G
GS
= 25 A;
= 25 A;
= 15 V;
= 0 V;
= 0 V;
DS
DS
= V
= 25 V;
= 1.2 ;
= 10
= 0 V
= 0 V
= 0 V
= 30 V
N-channel enhancement mode field-effect transistor
GS
;
Min
30
27
2
1
Typ
3
0.05
2
4.3
55
125
19
56
4500
1500
960
35
130
155
150
0.85
1.1
400
1.0
PHB160N03T
© Philips Electronics N.V. 2000. All rights reserved.
Max
4
4.4
10
500
100
5
9.3
6000
1800
1300
55
200
230
220
1.2
Unit
V
V
V
V
V
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
ns
5 of 13
A
A
C