PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 3

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07325
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
mb
der
function of mounting base temperature.
= 25 C; I
P der
(%)
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
tot
0
DM
25
is single pulse
100%
50
(A)
I D
10 3
10 2
10
1
75
1
R DSon = V DS / I D
P
100
t p
125
T
150
=
T mb ( o C)
t p
T
t
175
03aa16
Rev. 01 — 13 September 2000
200
DC
N-channel enhancement mode field-effect transistor
10
Fig 2. Normalized continuous drain current as a
V
GS
I
der
function of mounting base temperature.
I der
(%)
=
10 V
120
100
80
60
20
40
------------------ -
I
0
D 25 C
0
I
D
25
tp = 10 s
100 s
1 ms
10 ms
100ms
V DS (V)
100%
50
75
03ad34
PHB160N03T
100
© Philips Electronics N.V. 2000. All rights reserved.
10 2
125
150
T mb ( o C)
175
03ad31
200
3 of 13