PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 8

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07325
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 175 C; V
source-drain (diode forward) voltage; typical
values.
I D
(A)
100
40
80
60
20
0
0
0.2
GS
0.4
T j = 175 o C
= 0 V
0.6
V SD (V)
0.8
25 o C
03ad30
1.0
Rev. 01 — 13 September 2000
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 75 A; V
charge; typical values.
V GS
(V)
10
9
8
7
6
5
4
3
2
1
0
0
DS
= 15 V
20
40
PHB160N03T
V DS = 15V
I D = 75 A
60
© Philips Electronics N.V. 2000. All rights reserved.
80
Q G (nC)
100
03ad29
120
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