BUW12AW NXP Semiconductors, BUW12AW Datasheet

no-image

BUW12AW

Manufacturer Part Number
BUW12AW
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
DATA SHEET
BUW12W; BUW12AW
Silicon diffused power transistors
DISCRETE SEMICONDUCTORS
1997 Aug 14

Related parts for BUW12AW

BUW12AW Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 ...

Page 2

... Fig.1 Simplified outline (SOT429) and symbol. CONDITIONS open base see Figs 7 and 9 see Figs 2 and 4 see Fig see Fig.3 mb resistive load; see Figs 11 and 12 PARAMETER 1 Product specification BUW12W; BUW12AW MBB008 MAX. UNIT 850 V 1000 V 400 V 450 V 1.5 ...

Page 3

... BUW12W BUW12AW V base-emitter saturation voltage BEsat BUW12W BUW12AW I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE 1997 Aug 14 BUW12W; BUW12AW CONDITIONS open base see Figs 2 and 4 t < 2 ms; see Fig see Fig.3 mb CONDITIONS = 100 mA ...

Page 4

... BUW12AW Switching times inductive load (see Figs 13 and 14) t storage time s BUW12W BUW12AW t fall time f BUW12W BUW12AW Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 14 BUW12W; BUW12AW CONDITIONS 1.2 A Con Bon Boff Con Bon Boff ...

Page 5

... IV - Repetitive pulse operation in this region is permissible provided V (1) P line. tot max (2) Second breakdown limits. 1997 Aug 14 (1) II III I (2) DC BUW12W IV BUW12AW 100 BE 0 and Fig.2 Forward bias SOAR. 4 Product specification BUW12W; BUW12AW MGB927 (V) and t 0 ...

Page 6

... handbook, halfpage 50 V (mA) 250 200 horizontal oscilloscope 100 vertical 1 MGE252 Fig.6 5 Product specification BUW12W; BUW12AW 5 BUW12W BUW12AW 0 0 400 800 V CE (V) Fig.4 Reverse bias SOAR. 0 min V CEOsust Oscilloscope display for collector-emitter sustaining voltage. MGL174 1200 MGE239 V CE (V) ...

Page 7

... ( ( Fig.8 Base-emitter voltage as a function of base current; typical values. 1997 Aug 14 (1) (2) (3) ( 100 ( (1) (2) (3) 1 1.5 6 Product specification BUW12W; BUW12AW MGB914 (A) MGB911 2 2 (A) 2 ...

Page 8

... Aug 14 MGB872 10 handbook, halfpage (A) handbook, halfpage D.U.T. MGE244 /T = 0.01. p and Con 7 Product specification BUW12W; BUW12AW (A) Fig.10 DC current gain; typical values 90 10% 90 10% ...

Page 9

... Fig.13 Test circuit inductive load. 1997 Aug 14 handbook, halfpage D.U.T. MGE246 200 Product specification BUW12W; BUW12AW 90% 10% 90% 10 off Fig.14 Switching time waveforms with inductive load off MGE238 ...

Page 10

... Aug scale 3.7 0 4.0 5.45 0 3.6 3.3 REFERENCES JEDEC EIAJ TO-247 9 Product specification BUW12W; BUW12AW 2.6 7.5 15.7 3.5 5.3 0.4 2.4 3.3 7.1 15.3 EUROPEAN ISSUE DATE PROJECTION SOT429 97-06-11 ...

Page 11

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 BUW12W; BUW12AW 10 Product specification ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

Related keywords