BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BUW12AW
Manufacturer Part Number
BUW12AW
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW12AW.pdf
(12 pages)
- Current page: 9 of 12
- Download datasheet (85Kb)
Philips Semiconductors
1997 Aug 14
handbook, halfpage
Silicon diffused power transistors
V
CL
= 300 V; V
V BE
I B
Fig.13 Test circuit inductive load.
CC
= 30 V; V
BE
L B
= 5 V; L
L C
B
V CC
= 1 H; L
D.U.T.
C
= 200 H.
MGE246
V CL
8
handbook, halfpage
I B
I C
90%
90%
10%
10%
Fig.14 Switching time waveforms with
inductive load.
t r
BUW12W; BUW12AW
t s
t off
Product specification
I B on
t f
MGE238
I C on
I B off
t
t
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