MBM29LV002TC-70 Meet Spansion Inc., MBM29LV002TC-70 Datasheet

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MBM29LV002TC-70

Manufacturer Part Number
MBM29LV002TC-70
Description
Flash Memory Cmos 2m 256k ? 8 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
MBM29LV002TC
MBM29LV002BC
Data Sheet (Retired Product)
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number MBM29LV002TC/BC
-70/-90
-70/-90
/
Revision DS05-20863-5E
Issue Date July 26, 2007
90
MBM29LV002TC
-70/-90
Cover Sheet
/MBM29LV002BC
-70/-

Related parts for MBM29LV002TC-70

MBM29LV002TC-70 Summary of contents

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... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29LV002TC/BC / -70/-90 -70/-90 ...

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... This page left intentionally blank MBM29LV002TC/BC_DS05-20863-5E July 26, 2007 ...

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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...

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... BIT MBM29LV002TC ■ GENERAL DESCRIPTION The MBM29LV002TC/BC are a 2M-bit, 3.0 V-only Flash memory organized as 256K bytes of 8 bits each. The MBM29LV002TC/BC are offered in a 40-pin TSOP(1) and 40-pin SON packages. These devices are designed to be programmed in-system with the standard system 3 for write or erase operations ...

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... Fujitsu’s Flash technology combines years of EPROM and E of quality, reliability, and cost effectiveness. The MBM29LV002TC/BC memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection ...

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... MBM29LV002TC ■ FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(1) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) • ...

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... /MBM29LV002BC -70/-90 TSOP (1) (Marking Side) MBM29LV002TC/MBM29LV002BC Normal Bend (FPT-40P-M06) 20 (Marking Side MBM29LV002TC/MBM29LV002BC 10 Reverse Bend (FPT-40P-M07) Retired Product DS05-20863-5E_July 26, 2007 -70/- N. ...

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... MBM29LV002TC ■ PIN DESCRIPTION Pin name RY/BY RESET N. /MBM29LV002BC -70/-90 Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/Temporary Sector Unprotection No Internal Connection Device Ground Device Power Supply Retired Product  ...

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... MBM29LV002TC ■ BLOCK DIAGRAM RY/BY Buffer State Control RESET Command Register CE OE Low V Detector ■ LOGIC SYMBOL /MBM29LV002BC -70/-90 RY/BY Erase Voltage Generator Program Voltage Chip Enable Generator Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder ...

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... Legend Manufacturer and device codes may also be accessed via a command register write sequence. See “Sector Address Tables (MBM29LV002TC)” in ■ FLEXIBLE SECTOR-ERASE ARCHITECTURE Refer to “Sector Protection” in ■ FUNCTIONAL DESCRIPTION can 3.3 V ± ...

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... Erase can be resumed after suspend with Addr. (“H” or “L”). Data (30h) Notes : • Address bits X = “H” or “L” for all address commands except or Program Address (PA) and Sector Address (SA) • Bus operations are defined in “MBM29LV002TC/002BC User Bus Operations” in ■ DEVICE BUS OPERATION. • Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse ...

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... SD: Sector protection verify data. Output 01h at protected sector addresses and output 00h at unprotected sector addresses This command is valid while Fast Mode This command is valid while RESET The data “00h” is also acceptable. MBM29LV002TC/002BC Sector Protection Verify Autoselect Codes Type Manufacture’s Code MBM29LV002TC Device Code ...

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... One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes • Individual-sector, multiple-sector, or bulk-erase capability • Individual or multiple-sector protection is user definable. 16K byte 8K byte 8K byte 32K byte 64K byte 64K byte 64K byte MBM29LV002TC Sector Architecture Sector Address Tables (MBM29LV002TC) Sector Address SA0 0 0 SA1 ...

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... FUNCTIONAL DESCRIPTION Read Mode The MBM29LV002TC/BC have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...

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... MBM29LV002TC The manufacturer and device codes may also be read via the command register, for instances when the MBM29LV002TC/BC are erased or programmed in a system without access to high voltage on the A command sequence is illustrated in “MBM29LV002TC/002BC Standard Command Definitions” in ■ DEVICE BUS OPERATION. (Refer to “Autoselect Command”.) ...

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... Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h returns the device code (MBM29LV002TC = 40h and MBM29LV002BC = C2h). (See “MBM29LV002TC/002BC Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table” ...

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... After time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV002TC/002BC Standard Command Definitions” in ■ DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...

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... MBM29LV002TC recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 µs from the rising edge of the last write pulse will initiate the execution of the Sector Erase command(s). If another falling edge of the write pulse occurs within the 50 µ ...

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... Algorithm for Fast Mode” in ■ FLOW CHART.) TM “Embedded Program (3) Extended Sector Protection In addition to normal sector protection, the MBM29LV002TC/BC has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET pin requires V for sector protection in this mode ...

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... DQ 7 Data Polling The MBM29LV002TC/BC devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the devices will produce the complement of the data last written to DQ Algorithm, an attempt to read the device will produce the true data last written to DQ Erase Algorithm, an attempt to read the device will produce a “ ...

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... DQ 6 Toggle Bit I The MBM29LV002TC/BC also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...

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... RY/BY Ready/Busy The MBM29LV002TC/BC provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...

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... Data Protection The MBM29LV002TC/BC are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automatically reset the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences ...

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... Ambient Temperature MBM29LV002TC/BC-70 Power Supply Voltage MBM29LV002TC/BC-90 Note : Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges ...

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... MBM29LV002TC ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note: This waveform is applied for A /MBM29LV002BC -70/- Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 Retired Product DS05-20863-5E_July 26, 2007 ...

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... MBM29LV002TC ■ DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset Current CC (Automatic Sleep Mode Input Low Level Input High Level Voltage for Autoselect, Sector ...

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... Output Hold Time From Addresses OE, Whichever Occurs First RESET Pin Low to Read Mode Note : Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV002TC/BC-70) 1 TTL gate and 100 pF (MBM29LV002TC/BC-90) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...

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... CSP — — t 500 RP — t 200 RH ⎯ — t BUSY ⎯ — t EOE Retired Product DS05-20863-5E_July 26, 2007 -70/-90 MBM29LV002TC/BC -70 -90 Unit Typ Max Min Typ Max ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ...

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... MBM29LV002TC ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycle 100,000 ■ PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C = +25° 1.0 MHz Note : Test conditions T A /MBM29LV002BC -70/-90 Limits Min Typ Max — ...

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... MBM29LV002TC ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 30 /MBM29LV002BC -70/-90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...

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... MBM29LV002TC (2) AC Waveforms for Hardware Reset/Read Operations Address t RH RESET High-Z Outputs /MBM29LV002BC -70/- Address Stable t ACC Output Valid Retired Product DS05-20863-5E_July 26, 2007 -70/- ...

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... MBM29LV002TC (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes : • address of the memory location to be programmed. • data to be programmed at byte address. • the output of the complement of the data written to the device. ...

Page 33

... MBM29LV002TC (4) AC Waveforms for Alternate CE Controlled Program Operations 3rd Bus Cycle Address 555h GHEL CE Data Notes : • address of the memory location to be programmed. • data to be programmed at byte address. • the output of the complement of the data written to the device. ...

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... MBM29LV002TC (5) AC Waveforms Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h for Chip Erase. 34 /MBM29LV002BC -70/-90 2AAh 555h 555h 555h WPH AAh 55h 80h Retired Product  ...

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... MBM29LV002TC (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data Valid Data (The device has completed the Embedded operation.) 7 (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data ...

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... MBM29LV002TC (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET/RY/BY Timing Diagram WE RESET RY/BY 36 /MBM29LV002BC -70/- READY Retired Product DS05-20863-5E_July 26, 2007 -70/-90 Rising edge of the last WE signal Entire programming or erase operations BUSY t RB ...

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... MBM29LV002TC (10) AC Waveforms for Sector Protection Timing Diagram SAX VLHT VLHT WE t CSP CE Data t VCS Vcc SAX : Sector Address for initial sector SAY : Sector Address for next sector ...

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... MBM29LV002TC (11) Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY (12 Enter Erase Embedded Suspend Erasing WE Erase Toggle DQ and with OE Note : DQ is read from the erase-suspended sector /MBM29LV002BC -70/-90 t Program or Erase Command Sequence ...

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... MBM29LV002TC (13) Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Address Data 60h SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 150 µs (Min) /MBM29LV002BC -70/-90 SPAX TIME-OUT 40h 60h Retired Product  ...

Page 40

... MBM29LV002TC ■ FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHMS Increment Address 40 /MBM29LV002BC -70/-90 Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data Retired Product DS05-20863-5E_July 26, 2007 ...

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... MBM29LV002TC TM (2) Embedded Erase Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h /MBM29LV002BC -70/-90 Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): ...

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... MBM29LV002TC (3) Data Polling Algorithm Note : DQ is rechecked even /MBM29LV002BC -70/-90 Start Read ( Address for programming 7 0 Addr Yes DQ = Data Yes Read ( Addr Yes DQ = Data Fail Pass = “1” because DQ may change simultaneously with DQ ...

Page 43

... MBM29LV002TC (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ /MBM29LV002BC -70/-90 Start Read Addr. = "H" or "L" *1 Read Addr. = "H" or "L" Toggle? Yes ...

Page 44

... MBM29LV002TC (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed 44 /MBM29LV002BC -70/-90 Start Setup Sector Addr PLSCNT = RESET = Activate WE Pulse Time out 100 µ ...

Page 45

... MBM29LV002TC (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. /MBM29LV002BC -70/-90 Start 1 RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector 2 Unprotection Completed* Retired Product DS05-20863-5E_July 26, 2007 -70/-90 45 ...

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... MBM29LV002TC (7) Extended Sector Protection Algorithm FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 46 /MBM29LV002BC -70/-90 Start RESET = V ID Wait to 4 µs No Extended Sector Protection Entry? Yes To Setup Sector Protection ...

Page 47

... MBM29LV002TC (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address /MBM29LV002BC -70/-90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed XXXh/90h XXXh/F0h Retired Product DS05-20863-5E_July 26, 2007 -70/-90 Set Fast Mode ...

Page 48

... MBM29LV002TC ■ ORDERING INFORMATION Part number 40-pin plasticTSOP(1) MBM29LV002TC-70PTN MBM29LV002TC-90PTN 40-pin plastic TSOP (1) MBM29LV002TC-70PTR MBM29LV002TC-90PTR 40-pin plastic TSOP (1) MBM29LV002BC-70PTN MBM29LV002BC-90PTN 40-pin plastic TSOP (1) MBM29LV002BC-70PTR MBM29LV002BC-90PTR MBM29LV002 T C -70 DEVICE NUMBER/DESCRIPTION MBM29LV002 2Mega-bit (256K × 8-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase ...

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... MBM29LV002TC ■ PACKAGE DIMENSIONS 40-pin plastic TSOP(1) (FPT-40P-M06) LEAD No. 1 INDEX 20 +0.03 0.17 – 0.08 +.001 .007 – .003 20.00 (.787 *18.40 (.724 0.10(.004) "A" 2003 FUJITSU LIMITED F40007S-c-3-4 C /MBM29LV002BC -70/-90 Note1 : * : Resin protrusion. (Each side : +0.15 (.006) Max) Note2 : Pins width and pins thickness include plating thickness. ...

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... MBM29LV002TC 40-pin plastic TSOP(1) (FPT-40P-M07) LEAD No. 1 INDEX 20 +0.03 0.17 – 0.08 +.001 .007 – .003 "A" 2003 FUJITSU LIMITED F40008S-c-3 /MBM29LV002BC -70/-90 Note1 : * : Resin protrusion. (Each side : +0.15 (.006) Max) Note2 : Pins width and pins thickness include plating thickness. Note3 : Pins width do not include tie bar cutting remainder. ...

Page 51

... MBM29LV002TC Revision History Revision DS05-20863-5E(July 26, 2007) The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29LV002BC -70/-90 Retired Product DS05-20863-5E_July 26, 2007 -70/-90 51 ...

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... MBM29LV002TC -70/-90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 3545 North First Street, San Jose, CA 95134-1804, U ...

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