MBM29LV002TC-70 Meet Spansion Inc., MBM29LV002TC-70 Datasheet - Page 17

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MBM29LV002TC-70

Manufacturer Part Number
MBM29LV002TC-70
Description
Flash Memory Cmos 2m 256k ? 8 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
Byte Programming
Chip Erase
Sector Erase
The devices are programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses
are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge
of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins
programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required
to provide further controls or timings. The device will automatically provide adequate internally generated
program pulses and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ
bit at which time the devices return to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags” in ■ FUNCTIONAL DESCRIPTION.) Therefore, the devices require that a valid address to the
devices be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at
the memory location which is being programmed.
Any commands written to the chip during this period will be ignored. If hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from read/reset mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
“Embedded Program
typical command strings and bus operations.
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the devices will automatically program and verify the entire memory for an all
zero data pattern prior to electrical erase (Preprogram function). The system is not required to provide any
controls or timings during these operations.
The automatic erase begins on the rising edge of the last write pulse in the command sequence and terminates
when the data on DQ
Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming)
“Embedded Erase
command strings and bus operations.
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of write pulse, while the
command (Data=30h) is latched on the rising edge of write pulse. After time-out of 50 µs from the rising edge
of the last sector erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV002TC/002BC
Standard Command Definitions” in ■ DEVICE BUS OPERATION. This sequence is followed with writes of the
Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between
writes must be less than 50 µs otherwise that command will not be accepted and erasure will start. It is
TM
Algorithm” in ■ FLOW CHART illustrates the Embedded Erase
TM
7
MBM29LV002TC
is “1” (See “Write Operation Status”.) at which time the device returns to read the mode.
Algorithm” in ■ FLOW CHART illustrates the Embedded Program
Retired Product DS05-20863-5E_July 26, 2007
-70/-90
/MBM29LV002BC
7
is equivalent to data written to this
TM
Algorithm using typical
TM
Algorithm using
-70/-90
17

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