MBM29LV160TM-BM90 Meet Spansion Inc., MBM29LV160TM-BM90 Datasheet
MBM29LV160TM-BM90
Related parts for MBM29LV160TM-BM90
MBM29LV160TM-BM90 Summary of contents
Page 1
... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29LV160TM/BM 90 Revision DS05-20906-4E 90 ...
Page 2
... This page left intentionally blank MBM29LV160TM/BM_DS05-20906-4E July 31, 2007 ...
Page 3
SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
Page 4
... MBM29LV160TM/BM ■ DESCRIPTION The MBM29LV160TM/ 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3 program or erase operations. The devices can also be reprogrammed in standard EPROM programmers. ...
Page 5
... Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29LV160TM/BM is programmed by executing the program command sequence. This will invoke the TM Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin ...
Page 6
... MBM29LV160TM/BM ■ FEATURES • 0.23 μm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Industry-standard pinouts 48-pin TSOP (1) (Package suffix Normal Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 90 ns maximum access time • ...
Page 7
... N.C. 14 RY/ MBM29LV160TM/BM 48 pin TSOP(1) (Top View) (Marking Side) FPT-48P-M19 Retired Product DS05-20906-4E_July 31, 2007 BYTE ...
Page 8
... RESET BYTE RY/ N. MBM29LV160TM/BM Pin Configuration Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Hardware Reset Pin/Temporary Sector Unprotection Select Byte or Word mode Ready/Busy Output Device Power Supply Device Ground No Internal Connection Retired Product DS05-20906-4E_July 31, 2007 ...
Page 9
... State Control RESET BYTE Command Register CE OE Low V Detector ■ LOGIC SYMBOL MBM29LV160TM/BM RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder ...
Page 10
... MBM29LV160TM/BM ■ DEVICE BUS OPERATION MBM29LV160TM/BM User Bus Operations (Word Mode : BYTE = V Operation Standby Autoselect Manufacture Code *1 Autoselect Device Code *1 Read Output Disable Write (Program/Erase) Enable Sector Protection *2 Temporary Sector Unprotection Reset (Hardware) Legend : voltage levels. Hi-Z = High- ...
Page 11
... MBM29LV160TM/BM User Bus Operations (Byte Mode : BYTE = V Operation Standby Autoselect Manufacture Code *1 Autoselect Device Code *1 Read Output Disable Write (Program/Erase) Enable Sector Protection *2 Temporary Sector Unprotection Reset (Hardware) Legend : voltage levels. Hi-Z = High- 11 12. Manufacturer and device codes may also be accessed via a command register write sequence. ...
Page 12
... MBM29LV160TM/BM MBM29LV160TM/BM Standard Command Definitions* Bus Write Command Cy- Sequence cles Req'd Word Reset * 2 1 /Byte Word Reset * 2 3 Byte Word Autoselect(Device ID) 3 Byte Word Program 4 Byte Word Chip Erase 6 Byte Word Sector Erase 6 Byte Program/Erase Suspend * Program/Erase Resume * 1 Word Set to Fast Mode * ...
Page 13
... Sector Address (SA). Bus operations are defined in “MBM29LV160TM/BM User Bus Operations (Word Mode: BYTE = V and “MBM29LV160TM/BM User Bus Operations (Byte Mode : BYTE = Address of the memory location to be read Address of the memory location to be programmed. Addresses are latched on the falling edge of the write pulse ...
Page 14
... MBM29LV160TM/BM Type Manufacturer’s Code MBM29LV160TM Device Code MBM29LV160BM Sector Protection * for Byte mode Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses Sector Protection Verify Autoselect Codes Word X V Byte Word ...
Page 15
... Sector Address Table (MBM29LV160TM) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...
Page 16
... MBM29LV160TM/BM Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 ...
Page 17
... Number of Erase Block Regions within device (01h = uniform) 2Dh 0000h 2Eh 0000h Erase Block Region 1 Information 2Fh 0040h 30h 0000h Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/BM Description 1V/bit 100 mV/bit 1V/bit 100 mV/bit 0 pin) ...
Page 18
... MBM29LV160TM/BM (Continued 31h 0001h 32h 0000h 33h 0020h 34h 0000h 35h 0000h 36h 0000h 37h 0080h 38h 0000h 39h 001Eh 3Ah 0000h 3Bh 0000h 3Ch 0001h 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0033h ...
Page 19
... In Word mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu = 04h read cycle at address 01h outputs device code(MBM29LV160TM: 22C4h; MBM29LV160BM: 2249h). Notice that the above applies to Word mode. The addresses and codes differ from those of Byte mode. Refer to “Sector Protection Verify Autoselect Codes” ...
Page 20
... protected. “Sector Address Table (MBM29LV160TM)” and “Sector Address Table (MBM29LV160BM)” in ■DEVICE BUS OPERATION defines the sector address for each of the thirty-five (35) individual sectors. Pro- gramming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See “ ...
Page 21
... Following the command write, a read cycle from address 00h returns the manufactures’s code (Fujitsu = 04h). A read cycle at address 01h outputs device code (MBM29LV160TM : C4h in byte mode and 22C4h in word mode ; MBM29LV160BM : 49h in byte mode and 2249h in word mode). Refer to “Sector Protection Verify Autoselect Codes” ...
Page 22
... MBM29LV160TM/BM according to the data polling algorithm. But a read from Reset mode will show that the data is still “0”. Only erase operations can convert “0”s to “1”s. Note that attempting to program a “1” over a “0” will result in programming failure. This precaution is the same with Fujitsu standard NOR devices. “ ...
Page 23
... Reset command into the command register. (Refer to the “Embedded Program ■FLOW CHART.) The V active current is required even MBM29LV160TM/BM ” time-out from the rising edge whichever happens first for TOW will stop toggling. The user must use the address ...
Page 24
... MBM29LV160TM/BM Fast Programming During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). See “Embedded Algorithm for Fast Mode” in ■FLOW CHART. Program TM Extended Sector Protection In addition to normal sector protection, the device has Extended Sector Protection as extended function ...
Page 25
... This means that the device is driving status information one instant of time, and then that byte’s valid data the next. Depending on when the system 7 samples the DQ output, it may read the status or valid data. Even if the device completes the Embedded 7 MBM29LV160TM/BM Hardware Sequence Flags ...
Page 26
... Data Polling is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions. The OE and WE pins will control the output disable functions as described in “MBM29LV160TM/BM User Bus Operations (Word Mode : BYTE = V and “MBM29LV160TM/BM User Bus Operations (Byte Mode : BYTE = V The DQ failure condition may also appear if a user tries to program a non blank location without pre-erase ...
Page 27
... Erase-Suspend-Read (Erase-Suspended Sector) Erase-Suspend-Program *1 : Successive reads from the erasing or erase-suspend sector will cause Reading from the non-erase suspend sector address will indicate logic “1” at the DQ MBM29LV160TM/BM to toggle during the Embedded Erase Algorithm. If the 2 bit. 2 toggles only when the standard program or erase, or Erase Suspend 6 is high (see the section on “ ...
Page 28
... MBM29LV160TM/BM RY/BY Ready/Busy The device provides a RY/BY open-drain output pin to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. If the ...
Page 29
... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. MBM29LV160TM/BM Symbol Min Tstg – ...
Page 30
... MBM29LV160TM/BM ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – × 0 +14.0 V +12 +0 Note: This waveform is applied for Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 ...
Page 31
... DC operating current and the frequency dependent comnent Maximum I values are tested with active while Embedded Erase or Embedded Program is in progress Automatic sleep mode enables the low power mode when address remain stable for t MBM29LV160TM/BM Conditions ...
Page 32
... MBM29LV160TM/ Characteristics • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Read Output Enable Hold Time Toggle and Data Polling Output Enable to Output High-Z Output Hold Time From Addresses, ...
Page 33
... WE Setup Time CE Hold Time WE Hold Time CE Pulse Width Write Pulse Width CE Pulse Width High Write Pulse Width High Word Programming Time Byte Sector Erase Operation * 1 V Setup Time CC Recovery Time From RY/BY MBM29LV160TM/BM Symbol JEDEC Standard Min AVAV AVWL AS — ...
Page 34
... MBM29LV160TM/BM (Continued) Parameter Erase/Program Valid to RY/BY Delay 2 Rise Time Voltage Transition Time * 2 Write Pulse Width Setup Time to WE Active * 2 CE Setup Time to WE Active * 2 RESET Pulse Width RESET High Time Before Read Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : This does not include the preprogramming time ...
Page 35
... OE Pin and RESET Pin Capacitance = +25° 1.0 MHz Note : Test conditions T A ■ FBGA PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance OE Pin and RESET Pin Capacitance = +25° 1.0 MHz Note : Test conditions T A MBM29LV160TM/BM Value Unit Min Typ Max — — 25 1000 µ ...
Page 36
... MBM29LV160TM/BM ■ SWITCHING WAVEFORMS • Key to Switching Waveforms Address Data 36 90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” Changing Any Change ...
Page 37
... Address RESET High-Z Data Hardware Reset/Read Operation Timing Diagram Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/ Address Stable t ACC t CE Output Valid ...
Page 38
... MBM29LV160TM/BM 3rd Bus Cycle 555h Address GHWL A0h Data Notes : • address of the memory location to be programmed. • data to be programmed at word address. • the output of the complement of the data written to the device. ...
Page 39
... D is the output of the data written to the device. OUT • Figure indicates the last two bus cycles out of four bus cycle sequence. Alternate CE Controlled Program Operation Timing Diagram Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/BM Data Polling ...
Page 40
... MBM29LV160TM/BM Address 555h GHWL AAh Data RY/BY t VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) for Chip Erase. Chip/Sector Erase Operation Timing Diagram 40 90 2AAh 555h 555h 2AAh ...
Page 41
... MBM29LV160TM/BM Address XXXh SPD B0h Data RY/BY Erase Suspend Operation Timing Diagram Retired Product DS05-20906-4E_July 31, 2007 90 41 ...
Page 42
... MBM29LV160TM/BM Address Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation.) 7 Note : When checking Hardware Sequence Flags during program operations, it should be checked 4 μs after issuing program command. Data Polling during Embedded Algorithm Operation Timing Diagram ...
Page 43
... Toggle Bit l Timing Diagram during Embedded Algorithm Operations Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with read from the erase-suspended sector. 2 MBM29LV160TM/ AHT ASO AHT AS t CEPH t OEPH Toggle Toggle Toggle Data Data Data ...
Page 44
... MBM29LV160TM/ RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram CE, OE RESET RESET Timing Diagram (Not during Embedded Algorithms Rising edge of the last WE signal Entire programming or erase operations t BUSY READY Retired Product DS05-20906-4E_July 31, 2007 ...
Page 45
... WE RESET t RP RY/BY t READY RESET Timing Diagram (During Embedded Algorithms) Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/ ...
Page 46
... MBM29LV160TM/ SPAX VLHT VLHT WE CE Data t VCS V CC SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected VLHT t WPP t OESP t CSP Sector Protection Timing Diagram Retired Product DS05-20906-4E_July 31, 2007 ...
Page 47
... V CC VCS VIDR V ID RESET VLHT RY/BY Temporary Sector Unprotection Timing Diagram Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/BM Program or Erase Command Sequence Unprotection period 90 t VLHT VLHT 47 ...
Page 48
... MBM29LV160TM/ VCS RESET t VLHT t VIDR Add Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 μs (Min) Extended Sector Protection Timing Diagram 48 90 SAX TIME-OUT 60h 60h Retired Product DS05-20906-4E_July 31, 2007 ...
Page 49
... FLOW CHART EMBEDDED ALGORITHMS Increment Address Note : The sequence is applied for Word ( ×16 ) mode. The addresses differ from Byte ( × mode. MBM29LV160TM/BM Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): ...
Page 50
... MBM29LV160TM/BM EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command): Note : The sequence is applied for Word ( ×16 ) mode. The addresses differ from Byte ( × mode Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress Data = FFh ? Yes ...
Page 51
... DQ 7 Fail * : DQ is rechecked even “1” because Data Polling Algorithm Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/ Valid address for programming 0 = Any of the sector addresses within the sector being erased during sector erase or multiple sector Yes = Data? erases operation ...
Page 52
... MBM29LV160TM/ Read Toggle bit twice to determine whether it is toggling Recheck Toggle bit because it may stop toggling Start Wait 4 μs after issuing Program Command *1 Read Addr. = "H" or "L" *1 Read Addr. = "H" or "L" ...
Page 53
... Increment PLSCNT No PLSCNT = 25? Yes Remove V from Write Reset Command Device Failed in Byte ( × mode. Note : Sector Protection Algorithm Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/BM Start Setup Sector Addr PLSCNT = RESET = ...
Page 54
... MBM29LV160TM/ All protected sectors are unprotected All previously protected sectors are protected Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed *2 Temporary Sector Unprotection Algorithm Retired Product DS05-20906-4E_July 31, 2007 ...
Page 55
... Remove V from RESET Protection Other Sector? ID Write Reset Command Remove V Device Failed Write Reset Command Extended Sector Protection Algorithm Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/BM Start RESET = V ID Wait to 4 μs Extended Sector Protection Entry? Yes To Setup Sector PLSCNT = 1 To Protect Sector ...
Page 56
... MBM29LV160TM/BM FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for Word ( ×16 ) mode. • The addresses differ from Byte ( × mode. Embedded Program 56 90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ...
Page 57
... FBGA MBM29LV160TM90PBT 48-pin, plastic TSOP (1) MBM29LV160BM90TN 48-ball, plastic FBGA MBM29LV160BM90PBT MBM29LV160TM/BM 90 DEVICE NUMBER/DESCRIPTION 16 Mega-bit (2M × 8/1M × 16) MirrorFlash, Boot Sector 3.0 V-only Read, Program, and Erase MBM29LV160TM/BM Package Access Time (ns) (FPT-48P-M19) (Normal Bend (BGA-48P-M20) (FPT-48P-M19) (Normal Bend (BGA-48P-M20) TN PACKAGE TYPE ...
Page 58
... MBM29LV160TM/BM ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 Note Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006)Max(each side). Note 2) Pins width and pins thickness include plating thickness. ...
Page 59
... FBGA (BGA-48P-M20) 8.00 ± 0.20(.315 ± .008) (INDEX AREA) 0.10(.004) 2003 FUJITSU LIMITED B48020S-c-2-2 C MBM29LV160TM/BM +0.12 +.003 1.08 .043 –0.13 –.005 (Mounting height) 0.38 ± 0.10(.015 ± .004) (Stand off) 6.00 ± 0.20 4.00(.157) (.236 ± .008) Dimensions in mm (inches) Note : The values in parentheses are reference values. ...
Page 60
... MBM29LV160TM/BM MEMO 60 90 Retired Product DS05-20906-4E_July 31, 2007 ...
Page 61
... MEMO Retired Product DS05-20906-4E_July 31, 2007 MBM29LV160TM/ ...
Page 62
... MBM29LV160TM/BM MEMO 62 90 Retired Product DS05-20906-4E_July 31, 2007 ...
Page 63
... Revision History Revision DS05-20906-4E（July 31, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29LV160TM/BM Retired Product DS05-20906-4E_July 31, 2007 90 63 ...
Page 64
... MBM29LV160TM/BM FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94088-3470, U ...