MBM29LV160TM-BM90 Meet Spansion Inc., MBM29LV160TM-BM90 Datasheet - Page 17

• Manufacturer Part Number: MBM29LV160TM-BM90
• Description: Flash Memory Cmos 16 M 2m ? 8/1m ? 16 Bit Mirrorflashtm*
• Manufacturer: Meet Spansion Inc.

A
0
1Ah
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
to A
6
DQ
000Ah
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0007h
0000h
0000h
0001h
0000h
0004h
0000h
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
15
to DQ
0
Common Flash Memory Interface Code
Query-unique ASCII string “QRY”
Primary OEM Command Set
(02h = Fujitsu standard)
Address for Primary Extended Table
Alternate OEM Command Set
(00h = not applicable)
Address for Alternate OEM Extended Table
(00h = not applicable)
V
DQ
DQ
V
DQ
DQ
V
V
Typical timeout per single write 2
Typical timeout for Min size buffer write 2
Typical timeout per individual sector erase 2
Typical timeout for full chip erase 2
Max timeout for write 2
Max timeout for buffer write 2
Max timeout per individual sector erase 2
Max timeout for full chip erase 2
Device Size = 2
Flash Device Interface description
Max number of byte in
multi-byte write = 2
Number of Erase Block Regions within device (01h = uniform)
Erase Block Region 1 Information
CC
CC
PP
PP
7
3
7
3
Retired Product DS05-20906-4E_July 31, 2007
Min voltage (00h = no V
Max voltage (00h =no V
Min (write/erase)
Max (write/erase)
to DQ
to DQ
to DQ
to DQ
4
0
4
0
: 1V/bit,
: 100 mV/bit
: 1V/bit,
: 100 mV/bit
N
byte
N
N
times typical
pp
pp
MBM29LV160TM/BM
N
pin)
pin)
times typical
Description
N
N
times typical
μs
N
ms
N
N
μs
times typical
N
ms
(Continued)
90
17