MBM29PL160TD Fujitsu Microelectronics, Inc., MBM29PL160TD Datasheet
MBM29PL160TD
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MBM29PL160TD Summary of contents
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... FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS 16M (2M MBM29PL160TD FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with MASK ROM pinouts 48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) 44-pin SOP (Package suffix: PF) • ...
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... MBM29PL160TD (Continued) • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector protection Hardware method disables any combination of sectors from program or erase operations • Temporary sector unprotection Temporary sector unprotection with the software command • ...
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... MBM29PL160TD GENERAL DESCRIPTION The MBM29PL160TD/ 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (I), and 44-pin SOP packages. The device is designed to be programmed in-system with the standard system 3 are not required for write or erase operations ...
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... Kbytes or 128 Kwords SA7 224 Kbytes or 112 Kwords SA8 8 Kbytes or 4 Kwords SA9 8 Kbytes or 4 Kwords SA10 16 Kbytes or 8 Kwords MBM29PL160TD Top Boot Sector Architecture Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords ...
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... BLOCK DIAGRAM State WE Control BYTE Command Register CE OE Low V Detector /MBM29PL160BD -75/-90 MBM29PL160TD/160BD +0.6 V -75 –0 Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder -75/-90 -90 ...
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... MBM29PL160TD CONNECTION DIAGRAMS SOP (Marking Side ...
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... MBM29PL160TD LOGIC SYMBOL BYTE /MBM29PL160BD -75/-90 Table 1 MBM29PL160TD/BD Pin Configuration Pin Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable OE Write Enable WE Selects 8-bit or 16-bit mode BYTE N ...
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... Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) Verify Sector Protection (2), (4) Table 3 MBM29PL160TD/BD User Bus Operation (BYTE = V Operation Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) ...
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... Page Read Mode The MBM29PL160TD/BD is capable of fast Page read mode and is compatible with the Page mode MASK ROM read operation. This mode provides faster read access speed for random locations within a page. The Page size ...
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... Table 7, Command Definitions. Word represents the manufacture’s code and word For the MBM29PL160TD/BD these two bytes are given in the Table 4.2. All identifiers for manufactures and device will exhibit odd parity with DQ executing the Autoselect, A must BYTE = V (for byte mode), the device code is 27H (for top boot block) or 45H (for bottom boot block) ...
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... MBM29PL160TD Table 4.1 MBM29PL160TD/BD Sector Protection Verify Autoselect Code Type Manufacture’s Code MBM29PL160TD Word Device Code MBM29PL160BD Word Sector Protection Temporary Sector Unprotection * for Byte mode. -1 *2: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses. *3: Outputs 01H at Temporary Sector Unprotect and outputs 00H at Non Temporary Sector Unprotect. ...
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... SA4 SA5 SA6 SA7 SA8 SA9 SA10 /MBM29PL160BD -75/-90 Sector Address Tables (MBM29PL160TD Address Range 000000H to 03FFFFH 040000H to 07FFFFH 080000H to 0BFFFFH ...
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... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29PL160TD/BD features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 10). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. ...
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... The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A Byte Mode: AAAH or 555H to addresses A 6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. 14 /MBM29PL160BD -75/-90 MBM29PL160TD/BD Standard Command Definitions Second Third Bus Bus Write Cycle Write Cycle — ...
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... The operation is initiated by writing the Autoselect command sequence into the command register. Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29PL160TD = 27H and /MBM29PL160BD ...
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... MBM29PL160TD MBM29PL160BD = 45H for 8 mode; MBM29PL160TD = 2227H and MBM29PL160BD = 2245H for 16 mode). (See Tables 4.1 and 4.2.) All manufactures and device codes will exhibit odd parity with DQ The sector state (protection or unprotection) will be indicated by address XX02H for 16 (XX04H for 8). Scanning the sector addresses (A a logical “ ...
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... MBM29PL160TD Multiple sectors may be erased concurrently by writing six-bus cycle operations on Table 7. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 s otherwise that command will not be accepted and erasure will start ...
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... Extended Command (1) Fast Mode MBM29PL160TD/BD has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... DQ 7 Data Polling The MBM29PL160TD/BD device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices will produce the complement of the data last written to DQ Algorithm, an attempt to read the device will produce the true data last written to DQ Erase Algorithm, an attempt to read the device will produce a “ ...
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... DQ 6 Toggle Bit I The MBM29PL160TD/BD also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... Word/Byte Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29PL160TD/BD device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed When this pin is driven low, the device operates in byte (8-bit) mode. Under this mode, DQ ...
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... MBM29PL160TD Low V Write Inhibit CC To avoid initiation of a write cycle during V than 2.3 V (typically 2.4 V are disabled. Under this condition, the device will reset to the read mode. Subsequent writes will be ignored until the V level is greater than V CC LKO to prevent unintentional writes when V If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be erased again prior to programming ...
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... MBM29PL160TD Table 11 Common Flash Memory Interface Code Description Query-unique ASCII string 10h “QRY” 11h 12h Primary OEM Command Set 13h 2h: AMD/FJ standard type 14h Address for Primary 15h Extended Table 16h Alternate OEM Command 17h Set (00h = not applicable) ...
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... V Supply Voltages CC MBM29PL160TD/BD-75/90 ......................................................................+2 +3.6 V Operating ranges define those limits between which the functionality of the device is quaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All the device’s electrical characteristics are warranted when the device is operated within these ranges ...
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... MBM29PL160TD MAXIMUM OVERSHOOT +0.6 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +13.5 V +13 +0 Note : This waveform is applied for A Figure 3 /MBM29PL160BD -75/- Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. 9 Maximum Positive Overshoot Waveform 2 ...
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... MBM29PL160TD DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 CC V Current CC I CC4 (Automatic Sleep Mode) (Note 3) ...
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... OH or OE, Whichever Occurs First t ELFL — BYTE Switching Low or High t ELFH Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29PL160TD/BD-75) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Device Under Notes: C ...
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... FLQZ — t BYTE Switching High to Output Active FHQV Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 28 /MBM29PL160BD -75/-90 Description Read Toggle and Data Polling Byte Word -75/-90 MBM29PL160TD/BD Unit -75 -90 Min Min Min Min. ...
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... MBM29PL160TD SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE HIGH-Z Outputs Figure 5.1 /MBM29PL160BD -75/-90 INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...
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... MBM29PL160TD Outputs Figure 5.2 30 /MBM29PL160BD -75/-90 Addresses Valid PRC t ACC OEH t PACC t OH HIGH Waveforms for Page Read Mode Operations -75/- PACC ...
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... MBM29PL160TD 3rd Bus Cycle 555H PA Addresses WPH t GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device. ...
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... MBM29PL160TD Addresses Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. ...
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... MBM29PL160TD Addresses 555H GHWL AAH Data t VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 AC Waveforms for Chip/Sector Erase Operations ...
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... MBM29PL160TD Data Data Valid Data (The device has completed the Embedded operation.) 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations OES OE DQ Data Stops toggling. (The device has completed the Embedded operation.) ...
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... MBM29PL160TD CE BYTE ELFH Figure 11 Timing Diagram for Word Mode Configuration CE BYTE t ELFL A-1 Figure 12 Timing Diagram for Byte Mode Configuration /MBM29PL160BD -75/- FHQV ...
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... MBM29PL160TD CE WE BYTE Figure 13 36 /MBM29PL160BD -75/-90 The falling edge of the last WE signal Input Valid t SET HOLD BYTE Timing Diagram for Write Operations -75/-90 ...
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... MBM29PL160TD SAX VLHT VLHT WE t CSP CE Data t VCS V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note byte mode. ...
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... MBM29PL160TD Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with OE Note read from the erase-suspended sector /MBM29PL160BD -75/-90 Enter Erase Suspend Program Erase Erase Suspend Read Suspend Read Program Figure -75/-90 Erase Resume ...
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... MBM29PL160TD FLOW CHART Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 16 /MBM29PL160BD -75/-90 Start Write Program Command Sequence (See Below) Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH 2AAH/55H ...
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... MBM29PL160TD Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. 40 /MBM29PL160BD -75/-90 Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit from Device No Data = FFH ? Yes Erasure Completed ...
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... MBM29PL160TD rechecked even “1” because Figure 18 /MBM29PL160BD -75/-90 VA =Address for programming =Any of the sector addresses Start within the sector being erased during sector erase or multiple erases operation. Read Byte =Any of the sector addresses ( within the sector not being Addr ...
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... MBM29PL160TD * : DQ is rechecked even changing to “1” /MBM29PL160BD -75/-90 Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” Toggle Yes Fail Pass = “1” because DQ ...
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... MBM29PL160TD Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 20 /MBM29PL160BD -75/-90 Start Setup Sector Addr 19 16 PLSCNT = ...
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... MBM29PL160TD Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 21 44 /MBM29PL160BD -75/-90 Start Temporary Unprotect Enable Command Write (Note 1) Perform Erase or Program Operations Temporary Unprotect Disable Command Write Temporary Sector Unprotection Completed (Note 2) Temporary Sector Unprotection Algorithm ...
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... MBM29PL160TD Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 22 Embedded Programming Algorithm for Fast Mode /MBM29PL160BD -75/-90 Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes Programming Completed XXXH/90H ...
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... MBM29PL160TD ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz ...
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... MBM29PL160TD ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29PL160 T D DEVICE NUMBER/DESCRIPTION MBM29PL160 16 Mega-bit (2M 3.0 V-only Read, Write, and Erase /MBM29PL160BD -75/-90 -80 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout ...
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... MBM29PL160TD PACKAGE DIMENSIONS 48-pin plastic TSOP (I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C /MBM29PL160BD -75/-90 *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" ...
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... MBM29PL160TD 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C-2 C /MBM29PL160BD -75/-90 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part 0.15(.006) "A" 0.15(.006) 0.25(.010) 25 0.50± ...
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... MBM29PL160TD 44-pin plastic SOP (FPT-44P-M16) 28.45 44 INDEX LEAD No. 1 1.27(.050)TYP 0.10(.004) 26.67(1.050)REF 1998 FUJITSU LIMITED F44023S-4C /MBM29PL160BD -75/-90 +0.25 +.010 1.120 –0.20 –.008 23 13.00±0.10 16.00±0.20 (.512±.004) (.630±.008) 22 +0.10 +0.10 0.40 0.20 –0.05 –0.15 Ø0.13(.005) M +.004 (Stand off) .016 –.002 -75/-90 2.35±0.15(.093±.006) (Mounting height) 0.80± ...
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... MBM29PL160TD FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division ...