MBM29PL160TD Fujitsu Microelectronics, Inc., MBM29PL160TD Datasheet - Page 15

• Manufacturer Part Number: MBM29PL160TD
• Description: 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

SPA : Sector Address to be protected. Set sector address (SA) and (A
SD : Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector
*1.
*2.
*3.
Command Definitions
Read/Reset Command
Autoselect Command
Set to Fast
Mode
Fast Program *1
Reset from Fast
Mode *1
Query
Command *2
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in an improper sequence will reset the device to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The device remains enabled for reads until the command
register contents are altered.
The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory contents occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for specific timing parameters. (See Figure 5.1 and 5.2.)
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufactures and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A
read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29PL160TD = 27H and
This command is valid while fast mode.
Addresses from system set to A
The data" 00H" is also acceptable.
addresses.
Command
Sequence
MBM29PL160TD
Word
Word
Word
Word
Byte
Byte
Byte
Byte
Table 8
Cycles
Req'd
Write
Bus
3
2
2
2
MBM29PL160TD/BD Extended Command Definitions
AAAH
XXXH
XXXH
XXXH
XXXH
555H
0
Addr
AAH
55H
to A
Write Cycle
0
First Bus
to DQ
6
. The other addresses are “Don’t care”.
7
Data
AAH
A0H
90H
98H
and DQ
-75/-90
8
XXXH
XXXH
2AAH
Addr
555H
to DQ
Second Bus
PA
Write Cycle
—
15
/MBM29PL160BD
bits are ignored.
9
F0H *3
to a high voltage. However, multiplexing high
Data
55H
PD
—
6
, A
1
, A
5
= 1) to read mode, the read/reset
AAAH
Addr
555H
0
) = (0, 1, 0).
Write Cycle
—
—
—
Third Bus
Data
20H
—
—
—
Addr
Read Cycle
Fourth Bus
—
—
—
—
-75/-90
Data
—
—
—
—
15