MBM30LV0064 Fujitsu Microelectronics, Inc., MBM30LV0064 Datasheet - Page 15

• Manufacturer Part Number: MBM30LV0064
• Description: Flash Memory 64m 8m X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

1. DC Characteristics
Sequential Read Current
Command Address Input Current
Data Input Current
Program Current
Erase Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
I
I
I
I
I
V
V
I
I
V
I
V
I
CC1
CC3
CC4
CC6
CC7
SB1
SB2
I
LO
OL
LI
OH
OL
IH
IL
t
I
t
CE = V
WP = SE = 0 V/V
CE = V
WP = SE = 0 V/ V
V
V
I/O pins
Except I/O pins
I
I
V
CYCLE
OUT
CYCLE
OH
OL
OUT
OL
IN
= 2.1 mA
= –400 A
= 0 to 3.6 V
= 0.4 V
= 0 mA
= 0 to 3.6 V
= 50 ns, CE = V
= 50 ns, CE = V
Conditions
IH
CC
,
–0.2 V,
—
—
—
—
CC
CC
IL
IL
,
Min.
–0.3
2.0
2.0
2.4
—
—
—
—
—
—
—
—
—
—
8
MBM30LV0064
Value
Typ.
10
10
10
10
10
10
10
—
—
—
—
—
—
—
—
V
V
CC
CC
Max.
±10
±10
0.8
0.4
20
20
20
20
20
50
q +0.3
—
—
1
+0.3
Unit
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
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