MBM30LV0064 Fujitsu Microelectronics, Inc., MBM30LV0064 Datasheet - Page 38

• Manufacturer Part Number: MBM30LV0064
• Description: Flash Memory 64m 8m X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

38
MBM30LV0064
(18) CE don’t care timing for read and program operation
CE can be don’t-care (“H” or “L”) state during read and program operation as follows.
I/O0
to I/O7
I/O0
<Program Operation>
to I/O7
<Read Operation>
CE
WE
RE
WE
CE
R/B
Note: In the read operation, the CE signal must stay “Low” after the third address input and during
I/O0
to I/O7
CE
RE
Busy state. If the CE signal goes High during this period, the read operation will be
terminated and then the standby mode will be entered.
Command
80h
(55 ns Max.)
t
CEA
t
REA
A
A
A
0
A
0
7
to
7
to
D
A
A
OUT
9
16
to
A
A
9
16
A
to
A
17
22
to
A
A
17
22
to
D
0
IN
D
1
IN
CE
WE
D
N
D
OUT
2
IN
D
N+1
OUT
D
*
t
IN
CS
D
N+2
OUT
10h
t
WP
t
CH
: V
D
D
OUT
IH
or V
IL