AP01N60H APEC, AP01N60H Datasheet - Page 2

• Manufacturer Part Number: AP01N60H
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
3.Pulse width <300us , duty cycle <2%.
AP01N60H/J
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
j
=25
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
o
C , V
DD
=50V , L=10mH , R
Parameter
Parameter
3
3
3
j
j
j
=25
=150
=25
G
=25Ω , I
o
C)
o
C)
o
C(unless otherwise specified)
1
AS
V
Reference to 25℃, I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
=1.6A.
D
D
j
GS
GS
DS
DS
DS
DS
GS
DS
GS
DD
G
D
GS
DS
D
=1.6A
=1.6A
=25℃, I
=V
=187.5Ω
=10Ω,V
=0V, I
=10V, I
=V
=50V, I
=600V, V
=480V
=±30V
=480V
=10V
=300V
=0V
=25V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
,
D
=1.6A, V
=1mA
D
D
GS
V
=250uA
=0.8A
=0.8A
GS
GS
=10V
S
=0V
=1.5V
=0V
GS
D
=1mA
=0V
Min.
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
286
0.6
7.2
0.8
7.7
1.5
2.6
14
25
8
5
7
5
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
100
1.6
1.5
10
8
4
6
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
A
A
V
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