AP01N60H APEC, AP01N60H Datasheet - Page 4

• Manufacturer Part Number: AP01N60H
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP01N60H/J
0.01
0.1
16
12
10
8
4
0
1
0
1
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
Single Pulse
V
T
GS
DS
c
V
=25
V
DS
I
DS
2
D
o
, Drain-to-Source Voltage (V)
=1.6A
=480V
Q
10
C
t
d(on)
G
, Total Gate Charge (nC)
t
4
r
100
6
t
d(off)
1000
100ms
100us
10ms
10us
1ms
8
t
f
10000
10
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.00001
1
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
0.01
0.02
Duty factor=0.5
0.05
V
0.2
0.1
Single Pulse
G
0.0001
5
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
T
x R
1
25
thjc
+ T
Q
C
C
C
C
iss
oss
rss
10
29
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