AP01N60H APEC, AP01N60H Datasheet - Page 3

• Manufacturer Part Number: AP01N60H
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

100
0.1
1.5
0.5
1.2
1.1
0.9
0.8
10
1
0
1
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
Temperature
Reverse Diode
V
T
T
DS
j
V
o
j
5
0
= 150
C
, Junction Temperature (
SD
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
o
C
0.6
10
50
DSS
0.8
v.s. Junction
100
15
o
T
V
C)
j
G
= 25
1
= 4.5 V
6.0V
5.5V
5.0V
10V
o
C
1.2
150
20
0.9
0.6
0.3
0
3
2
1
0
5
4
3
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
C
I
V
=150
D
G
v.s. Junction Temperature
V
=0.8A
Junction Temperature
=10V
DS
T
T
o
j
0
5
0
j
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
50
10
50
AP01N60H/J
100
100
15
o
o
C )
V
C )
G
= 4.5 V
6.0V
5.5V
5.0V
10V
150
150
20
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